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عنوان دوره: اولین همایش ملی توسعه فناوری نانو در علوم پایه و مهندسی

کد مقاله : 1025-DNBSE

استان تهران-دانشگاه خوارزمی

We investigated the electrical behavior of nano porous silicon layers in the presence of CO2 and N2 gases(at room temperature). A sample of p-type silicon wafer was poroused by electrochemical anodization in electrolyte which consist of DMF (dimethylformamide) , HF acid and ethanol (C2H5OH). SEM spectra of Porous Silicon Nanostructure demonstrate the influence of various parameters such as anodization time, current density and electrolyte concentration has been investigated on pore formation. We also examine our test system for gas sensors. Electrical mechanisms of the sensors in room temperature are proposed. The results are shown that the Porous silicon layer is more sensitive to CO2 than N2 gas.

Porous silicon؛ DMF؛ Wafer؛ SEM

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