Simulation of the role of the Ag: ZnSe passivation layer on improvement of the performance of CdTe-based nanostructured thin film solar cell
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عنوان دوره: اولین همایش ملی توسعه فناوری نانو در علوم پایه و مهندسی
کد مقاله : 1020-DNBSE
نویسندگان
1استان مرکزی دانشگاه اراک
2دانشگاه اراک دانشکده علوم
3دانشگاه اراک
چکیده
In this paper, FTO/TiO2/n- ZnSe/p-CdTe/Ag: ZnSe/Ni nanostructured thin film solar cell was designed and analyzed by using a SCAPS 1-D simulator program under AM 1.5 G illumination. In this structure, FTO, TiO2, ZnSe, CdTe, and Ni act as the front electrode, the window layer, the buffer layer, and the light absorber layer, and the back electrode, respectively. Since there is a schottky barrier problem in the connection of metal and semiconductor of type p, we use a nanostructured passive layer after the absorber layer to solve this problem and establish the desired ohmic connection. The Ag: ZnSe nanostructured passivation layer acts as a hole transport layer (HTL) and electron blocking layer (EBL). The results of the initial analysis showed that the presence of the Ag: ZnSe nanostructured layer with a band gap of 1.7 eV increased the power conversion efficiency (PCE) from 17.32% to 22 61% compared to the case where this layer is in the cell architecture.
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